In the first half of 2026, the global penetration rate of N-type TOPCon and HJT high-efficiency photovoltaic cells exceeded 65%, completely replacing traditional P-type batteries and becoming the mainstream of the market. Compared with P-type batteries, N-type high-efficiency cells have stricter requirements on silicon wafer purity, lattice integrity and minority carrier lifetime. Trace metal impurities and micro-particle contamination in silicon wafers will directly lead to reduced conversion efficiency and increased attenuation rate of photovoltaic modules, which puts forward higher ultra-high purity and ultra-clean requirements for photovoltaic furnace graphite thermal field components.
In the P-type battery era, photovoltaic graphite thermal fields generally adopt medium-purity medium-grain graphite with ash content below 50ppm, which can meet basic production needs. However, in the N-type production scenario, trace iron, copper, nickel and other metal impurities in ordinary graphite will volatilize at high temperature and penetrate into molten silicon, forming micro-defects in silicon wafers, seriously restricting the efficiency improvement of high-efficiency batteries. Therefore, mainstream photovoltaic manufacturers around the world have successively updated their procurement standards, requiring the ash content of thermal field graphite components to be controlled below 10ppm, and implementing full high-temperature purification treatment for all thermal field parts.
In addition to purity upgrading, the long-cycle crystal pulling technology popularized by large-size 210mm silicon wafers also puts forward new requirements on the structural stability and anti-erosion performance of graphite thermal fields. Modern photovoltaic production adopts uninterrupted long-cycle crystal pulling of more than 200 hours per furnace, and graphite components need to work stably in high-temperature silicon vapor erosion environment for a long time. Traditional spliced thermal field structures are prone to temperature field distortion and local oxidation failure, resulting in frequent furnace shutdown and replacement. Integrated large-size high-density impregnated graphite thermal fields have become the new industry standard.
Industry statistics show that in 2026, the global market demand for N-type high-purity photovoltaic graphite thermal field components increased by 27.3% year-on-year, while the backward low-purity spliced thermal field product market shrank by 18%. The photovoltaic graphite industry is facing a comprehensive elimination of backward production capacity and a rapid upgrade of high-end products. Graphite processing enterprises that cannot adapt to N-type high-standard requirements will be completely eliminated from the mainstream photovoltaic supply chain.
Huixian Jincheng Abrasive & Graphite Mold Factory has taken the lead in completing the technical upgrade of N-type photovoltaic high-purity graphite thermal field components in 2026, and has become a stable supplier of many global large-scale photovoltaic manufacturers. The company fully abandons medium and low-purity graphite raw materials, and exclusively selects high-quality ultra-fine grain isostatic graphite for photovoltaic high-efficiency thermal fields. Through secondary high-temperature halogen purification and multi-cycle vacuum impregnation treatment, the impurity content of the components is stably controlled below 10ppm, fully meeting the N-type high-efficiency silicon wafer production standards.
Aiming at the long-cycle crystal pulling production mode, Jincheng Graphite optimizes the integrated structural design of thermal field components, replaces the traditional segmented splicing structure with integral large-size graphite heaters and heat insulation barrels, eliminates assembly gaps and temperature difference dead angles, and realizes ultra-uniform thermal field distribution. The optimized high-density impregnated structure can effectively resist silicon vapor erosion, extend the continuous service life of thermal field components by more than 40%, and greatly reduce the equipment shutdown frequency and consumable replacement cost of photovoltaic enterprises.
At the same time, the company provides professional thermal field maintenance and regeneration services for old equipment of overseas photovoltaic enterprises, purifies and re-impregnates used graphite thermal field parts, upgrades ordinary thermal fields to N-type high-standard thermal fields, and helps customers complete technical iterations at low cost. With the continuous popularization of N-type technology in the global photovoltaic industry, Jincheng Graphite will continue to optimize thermal field component performance and processing technology, and provide high-stability and high-purity graphite thermal field supporting solutions for the global high-efficiency photovoltaic manufacturing industry.
