The semiconductor graphite uniform temperature plate (Graphite Temperature Uniforming Plate for Semiconductor) is a core and precise component in semiconductor wafer manufacturing equipment (such as chemical vapor deposition CVD, physical vapor deposition PVD, etching Etch). It utilizes the high thermal conductivity and isotropy of ultra-high-purity isostatic graphite, combined with precisely machined internal channels, to achieve rapid and uniform heating or cooling of 200mm, 300mm, and even 450mm wafers. This ensures that the surface temperature uniformity (Temperature Uniformity) of the wafers reaches within ±1℃ within the extreme process temperature range of 900-1200℃, which is crucial for maintaining low defect rates and high performance of the wafers.
Working Principle (Working Principle)
The core of the semiconductor graphite uniform temperature plate is the internally precisely designed channels (Channels). When high-temperature gases (such as Ar, N₂) or cooling liquids (such as ultra-pure water) flow through these channels, the heat is efficiently transferred to the entire surface of the graphite plate. Due to the excellent isotropic thermal conductivity of isostatic graphite, the heat can be uniformly distributed instantaneously, thus ensuring that the surface temperature of the wafers placed on the plate is highly consistent.
Core Features
Excellent high-temperature performance and stability
High-temperature resistance: The long-term stable working temperature can reach 1200℃, and the instantaneous temperature resistance is even higher.
Thermal shock resistance: It can withstand rapid heating and cooling (such as 100℃/s), without deformation or cracking.
4. High-precision processing and customization
Precise dimensions: The key dimensions are controlled within ±0.02mm, and the surface roughness is Ra ≤ 0.4μm.
Customization services: According to the customer's equipment model and process requirements, various sizes and flow channel structures of graphite plates can be customized.
Industry Applications
Industry Applications
Semiconductor graphite uniform temperature plates are key consumables in the manufacturing process of integrated circuits (ICs), and are mainly applied in the following stages and equipment:
1. Wafer Fabrication
2. CVD equipment: used for temperature control during film deposition.
3. PVD equipment: used for temperature control in processes such as sputtering.
4. Etch equipment: used for temperature control during wafer etching.
5. RTP equipment: used for rapid heating and cooling of wafers.
6. Annealing Furnace: used for high-temperature annealing treatment of wafers.
Advantages
Excellent temperature uniformity: far superior to metals (such as aluminum, copper) and ceramic materials.
Ultra-high purity and cleanliness: meets the strict requirements of semiconductor manufacturing.
High temperature resistance and thermal shock resistance: stable performance and long lifespan.
Isotropic: uniform heat conduction, no hotspots.
Disadvantages
High cost: compared to metals and ceramics, the cost of graphite materials and precision processing is higher.
Brittle: although strong, it is still a brittle material, requiring careful handling and installation to avoid severe impacts.
Why Choose Us
1. Controllable source quality: Our own isostatic graphite production line ensures the long-term stability of the substrate purity and performance.
2. Customization experts: A professional R&D team can quickly design and manufacture high-precision customized graphite plates according to the unique needs of customers.
3. Strict quality control: Certified by ISO 9001 and IATF 16949, each graphite plate undergoes strict testing and provides detailed quality reports.
4. Rapid response and delivery: Sample delivery cycle is 7-10 days, and for bulk orders, it takes 20-30 days, meeting the needs of customers for rapid research and mass production.
5. Professional overseas services: Equipped with a professional English technical team, providing one-stop services from design, manufacturing to after-sales, and on-site technical support is available.
| Parameter | Unit | Specification (Model: GTUP-9999) | Test Method |
|---|---|---|---|
| Basic Properties | |||
| Carbon Content | % | ≥99.99 | GB/T 3521-2008 |
| Ash Content | ppm | ≤30 | ICP-MS Detection |
| Density | g/cm³ | 1.85-1.93 | Archimedes Method |
| Porosity | % | ≤10 | Mercury Intrusion |
| Thermal Properties | |||
| Max Operating Temperature | °C | 1200 | Thermal Analysis |
| Thermal Conductivity (at 1000°C) | W/(m·K) | 150-200 | Laser Flash Method |
| Thermal Expansion Coefficient (25-1000°C) | 10⁻⁶/°C | 2.5-3.0 | Dilatometer |
| Temperature Uniformity | °C | ≤±1 | Thermocouple Mapping |
| Mechanical Properties | |||
| Flexural Strength (at 25°C) | MPa | ≥40 | Three-point Bending |
| Compressive Strength (at 25°C) | MPa | ≥120 | Uniaxial Compression |
| Dimensional Specifications | |||
| Typical Size (L×W×H) | mm | 300×300×20 ~ 450×450×50 | Coordinate Measuring Machine |
| Dimensional Tolerance | mm | ±0.02 | Coordinate Measuring Machine |
| Surface Roughness (Ra) | μm | ≤0.4 | Profilometer |
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