The photovoltaic production graphite furnace heater is the core radiant heating component of the photovoltaic thermal field system, functionally independent from the graphite electrodes that conduct current. Made from photovoltaic-grade triaxial isostatically pressed high-purity graphite with integrated slot processing, it comes in three main structural types: monolithic cylindrical, multi-segment split, and annular slotted designs. It is specifically engineered for CZ single-crystal pulling furnaces, polysilicon ingot casting furnaces, and silicon wafer annealing and sintering furnaces.
Compared with single conductive graphite electrodes, this product relies on the overall tube wall to radiate heat. Under the argon gas vacuum crystal growth conditions ranging from 1420 to 1650℃, it continuously provides a uniform heat field. After 72 hours of long-term vacuum degassing and double-layer treatment of the inner wall with SiC passivation, it significantly reduces the high-temperature exhaust volume, while resisting silicon vapor penetration corrosion. The boron and phosphorus donor impurities are strictly controlled to avoid the drift of silicon melt resistivity and the attenuation of minority carrier lifetime of silicon wafers. It is suitable for the entire process of 8-12 inch large-sized photovoltaic single crystal silicon production, polycrystalline silicon directional solidification ingot, and battery pad passivation heat treatment, and is the core consumable with the highest frequency of heat field replacement in overseas photovoltaic factories.
Uniform radiation heat field throughout the area, with high temperature control accuracy
Multi-directional slot radiation structure, the radial temperature field uniformity inside the furnace is ±3℃, the longitudinal temperature difference is ≤±5℃, the diameter fluctuation of the crystalline silicon rod is controlled within ±0.8mm, significantly reducing silicon material loss.
Photovoltaic-grade ultra-low high-temperature exhaust, eliminating electrical defects in silicon wafers
The total exhaust rate at 1600℃ vacuum condition is < 9×10⁻¹⁰ Pa・m³/s, the release of carbon-hydrogen volatile components is < 0.008 ppm, the exhaust volume is 93% lower than that of common vacuum graphite heating components, avoiding silicon wafer light attenuation and resistance deviation.
Customized and compatible full-range photovoltaic equipment
Supports non-standard customization of 8-12 inch single crystal furnaces, various ingot furnaces, and tube annealing furnaces. The cylinder diameter ranges from 300 to 1300 mm, with a wall thickness of 12 to 40 mm. The number of slots, the number of petals, and the interface dimensions can be adjusted as needed.
Complete photovoltaic export supporting qualifications
The factory comes with SEMI PV2 clean certification, ICP trace impurity test report, vacuum exhaust helium test report, MSDS, and REACH compliance documents, meeting the import review standards of photovoltaic factories in Europe, America, and Southeast Asia.
Why Choose Us?
Special production line for photovoltaic thermal field, dedicated degassing and passivation process for heaters
2. One-stop customized solution for global full-range of photovoltaic single-crystal / ingot furnaces
3. Specialized thermal field simulation support for the photovoltaic industry
4. Split-type structure cost reduction solution, reducing downtime losses
5. Complete set of photovoltaic export compliance documents + Global after-sales response
| No. | Inspection Item | PV Graphite Furnace Heater Standard Parameter | Professional Test Method |
|---|---|---|---|
| 1 | Base Raw Material | PV Grade Fine Grain 3D Isostatic Graphite (D50=6μm) | Laser Particle Size Analyzer |
| 2 | Fixed Carbon Content | ≥99.992% | High-temperature Combustion Carbon Analyzer |
| 3 | Total Ash Content | ≤1.5 ppm | ICP-MS Full Element Scanning Test |
| 4 | Boron Impurity Content | ≤0.012 ppm | Ultra-trace ICP-MS Detection |
| 5 | Phosphorus Impurity Content | ≤0.015 ppm | Ultra-trace ICP-MS Detection |
| 6 | Total Transition Metal Impurity (Fe, Cu, Ni, Cr) | ≤0.18 ppm | Multi-element Mass Spectrometry |
| 7 | Total Outgassing Rate (1600℃ Vacuum Argon) | ＜9 × 10⁻¹⁰ Pa·m³/s | Helium Leak Vacuum Degassing Tester |
| 8 | Volatile Hydrocarbon Release Volume | ＜0.008 ppm | Thermal Desorption GC-MS Analysis |
| 9 | Bulk Density | 1.87 – 1.90 g/cm³ | Archimedes Density Measuring Method |
| 10 | Internal Porosity | ＜0.14 % | Mercury Intrusion Porosimetry |
| 11 | Coefficient of Thermal Expansion (25–1650℃) | 2.7 × 10⁻⁶ /℃ | High-temperature Dilatometer |
| 12 | Flexural Strength (1650℃) | ≥42 MPa | High-temperature Bending Strength Tester |
| 13 | Compressive Strength (Room Temp) | ≥62 MPa | Universal Compression Testing Machine |
| 14 | Silicon Vapor Corrosion Loss Rate | ≤0.003 mm per 100 crystal pulling batches | High-temperature Silicon Steam Aging Test |
| 15 | Radial Thermal Field Uniformity | ±3 ℃ inside furnace cavity | Multi-point Thermocouple Temperature Scanning |
| 16 | Thermal Shock Resistance Cycles (1650℃ ↔ RT) | ≥1000 cycles without crack/deformation | Thermal Cycle Furnace Aging Test |
| 17 | Continuous Service Life (CZ Monocrystalline Furnace) | ≥550 crystal pulling batches | Actual PV Furnace Production Test |
| 18 | Surface Anti-corrosion Treatment | Dense SiC Passivation Coating (Thickness 40–70μm) | Coating Thickness Gauge |
| 19 | Optional Structural Style | Integral cylinder / 6/8 split multi-piece cylinder / annular slotted ring / small tube annealing heater | Custom CNC Machining per Drawings |
| 20 | Maximum Custom Size Range | Inner Diameter: 300–1300 mm; Height: 400–2800 mm | CMM 3D Coordinate Measuring Instrument |
| No. | Inspection Item | PV Graphite Furnace Heater Standard Parameter | Professional Test Method |
|---|---|---|---|
| 1 | Base Raw Material | PV Grade Fine Grain 3D Isostatic Graphite (D50=6μm) | Laser Particle Size Analyzer |
| 2 | Fixed Carbon Content | ≥99.992% | High-temperature Combustion Carbon Analyzer |
| 3 | Total Ash Content | ≤1.5 ppm | ICP-MS Full Element Scanning Test |
| 4 | Boron Impurity Content | ≤0.012 ppm | Ultra-trace ICP-MS Detection |
| 5 | Phosphorus Impurity Content | ≤0.015 ppm | Ultra-trace ICP-MS Detection |
| 6 | Total Transition Metal Impurity (Fe, Cu, Ni, Cr) | ≤0.18 ppm | Multi-element Mass Spectrometry |
| 7 | Total Outgassing Rate (1600℃ Vacuum Argon) | ＜9 × 10⁻¹⁰ Pa·m³/s | Helium Leak Vacuum Degassing Tester |
| 8 | Volatile Hydrocarbon Release Volume | ＜0.008 ppm | Thermal Desorption GC-MS Analysis |
| 9 | Bulk Density | 1.87 – 1.90 g/cm³ | Archimedes Density Measuring Method |
| 10 | Internal Porosity | ＜0.14 % | Mercury Intrusion Porosimetry |
| 11 | Coefficient of Thermal Expansion (25–1650℃) | 2.7 × 10⁻⁶ /℃ | High-temperature Dilatometer |
| 12 | Flexural Strength (1650℃) | ≥42 MPa | High-temperature Bending Strength Tester |
| 13 | Compressive Strength (Room Temp) | ≥62 MPa | Universal Compression Testing Machine |
| 14 | Silicon Vapor Corrosion Loss Rate | ≤0.003 mm per 100 crystal pulling batches | High-temperature Silicon Steam Aging Test |
| 15 | Radial Thermal Field Uniformity | ±3 ℃ inside furnace cavity | Multi-point Thermocouple Temperature Scanning |
| 16 | Thermal Shock Resistance Cycles (1650℃ ↔ RT) | ≥1000 cycles without crack/deformation | Thermal Cycle Furnace Aging Test |
| 17 | Continuous Service Life (CZ Monocrystalline Furnace) | ≥550 crystal pulling batches | Actual PV Furnace Production Test |
| 18 | Surface Anti-corrosion Treatment | Dense SiC Passivation Coating (Thickness 40–70μm) | Coating Thickness Gauge |
| 19 | Optional Structural Style | Integral cylinder / 6/8 split multi-piece cylinder / annular slotted ring / small tube annealing heater | Custom CNC Machining per Drawings |
| 20 | Maximum Custom Size Range | Inner Diameter: 300–1300 mm; Height: 400–2800 mm | CMM 3D Coordinate Measuring Instrument |
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