graphite box for 3000°C graphitization of synthetic graphite anode

Raw material selection: Use high-purity graphite powder (99.99%+) with metal impurities (Fe, Ni, Cu) ≤ 20 ppm and non-metallic impurities (S, P) ≤ 10 ppm.
Isostatic pressing: Uniformly press at a pressure of 300-500 MPa to ensure three-dimensional isotropy of the material and a thermal conductivity difference of ≤ 5%.
Pre-graphitization treatment: High-temperature treatment at 2800°C to enhance the crystallinity and thermal stability of the material and reduce volume shrinkage during use.
Precision machining: Machining with CNC machine tools, with size tolerance controlled within ±0.1mm to ensure stability of the stack inside the furnace.
Surface treatment: Optional oxidation-resistant coatings such as Si₃N₄ and TaC, which can increase the service life by 3-5 times and reduce carbon pollution.

The graphite box plays the role of a "high-temperature protection container" in the synthesis process of graphite anode graphiteization. The core workflow is as follows:
Loading raw materials: Put the granulated petroleum coke / needle-like coke anode materials into the graphite box, with a filling density controlled at 0.8-1.0 g/cm³
Stacking in the furnace: The graphite box is stacked orderly in the graphiteization furnace to form a continuous heating zone, ensuring temperature uniformity (±2°C)
Heating and graphiteization: Under argon / nitrogen protection, heat at a rate of 5-10°C/min to 2800-3000°C and hold for 2-4 hours
Cooling and discharging: Cool down to below 100°C according to the program, remove the graphite box, and obtain high crystallinity synthetic graphite anode materials

The structural features optimized for the 3000°C graphitization process:
Box structure: Square / Rectangular design, with rounded corners at the four corners to reduce stress concentration and prevent cracking under high temperature
Wall thickness design: Side walls 15-25mm, bottom 20-30mm, balancing strength and thermal conductivity efficiency
Sealing design: The box cover and box body adopt concave-convex fitting to ensure sealing, preventing atmosphere leakage and material oxidation
Ventilation system: 0.5-1mm micropores are opened on the side walls / bottom to ensure air circulation and facilitate the discharge of impurity gases
Stacking structure: Positioning grooves are designed on the top / bottom of the box to ensure the stability of multi-layer stacking, with a maximum stacking height of up to 2m
Size series: Standard sizes 400×400×300mm, 500×500×350mm, supporting customized design

Ultra-high Temperature Performance Advantage
Extreme Temperature Resistance: Can operate stably for a long time at 3000°C in an inert atmosphere, and has a momentary temperature resistance of up to 3200°C
Thermal Stability: Volume change rate at 3000°C is ≤ 0.2%, ensuring dimensional accuracy during long-term use
Thermal Shock Resistance: No cracks occur when rapidly cooled from 3000°C to room temperature, thermal expansion coefficient is 2.0-3.0×10⁻⁶/°C
Uniform Heat Conduction: Thermal conductivity is 120-180 W/(m・K), ensuring uniform temperature of materials inside the box and improving product consistency

Core Requirements: High purity (99.99%+), high crystallinity, low impurities, stable electrochemical performance
Recommended Products: Isostatic Pressed Graphite Box (IGB-3000), Coated Isostatic Pressed Graphite Box (CIGB-3000)
Specific Benefits:
Enhanced Product Performance: Graphitization at 3000°C results in an initial Coulomb efficiency of 94%+ and a cycle life of > 1500 times
Reduced Production Costs: Long service life (80-150 cycles) reduces replacement frequency and increases equipment utilization
Ensured Batch Consistency: Homogeneous material ensures uniform heating of the materials within the box, with product performance fluctuations < 2%

Core requirements: High-temperature stability, anti-expansion, low pollution
Recommended product: Coated isostatic press graphite box (CIGB-3000)
Specific value:
Inhibit silicon particle expansion: Provide stable accommodating space, reduce material pulverization
Prevent impurity pollution: High-purity material avoids silicon-carbon materials being contaminated by metallic impurities
Improve cycling performance: Stable graphiteization environment keeps the capacity retention rate of silicon-carbon composite materials > 90% (1000 cycles)