Graphite Susceptor For MOCVD Epitaxial Growth

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Graphite Susceptor For MOCVD Epitaxial Growth
Details
High-purity graphite susceptor for MOCVD epitaxial growth in LED and power semiconductor manufacturing. CVD SiC coating option for extended service life and low particle generation.
Category
Wafer Graphite Carrier
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Description

Product Overview

High-purity graphite susceptors are critical components in MOCVD (Metal-Organic Chemical Vapor Deposition) reactors for LED and power semiconductor manufacturing. Our graphite susceptors are precision machined from high-purity isostatic graphite, often with CVD silicon carbide coating, providing excellent temperature uniformity, low particle generation, and long service life in demanding epitaxial growth processes.

Key Features

  • High purity isostatic graphite for minimal contamination
  • Excellent temperature uniformity across wafer surface
  • CVD SiC coating option for extended service life
  • Precision machined pockets for exact wafer fit
  • Low outgassing and particle generation
  • Custom designs for different MOCVD reactor models
  • Compatible with GaN, GaAs, and SiC epitaxial processes

Technical Specifications

Parameter Unit Value
Material - High Purity Isostatic Graphite
Bulk Density g/cm³ 1.85 - 1.90
Flexural Strength MPa 50 - 60
Thermal Conductivity W/(m·K) 140 - 160
Ash Content ppm <30
Flatness mm ≤0.03
Wafer Sizes inch 2, 4, 6, 8
Coating Option - CVD SiC

Applications

  • LED manufacturing MOCVD reactors
  • Power semiconductor epitaxial growth
  • GaN and GaAs device fabrication
  • SiC epitaxial deposition
  • Compound semiconductor processing
  • Optoelectronic device manufacturing
  • RF and microwave semiconductor production

Why Choose Jincheng Graphite Susceptors?

We manufacture precision graphite susceptors and carriers for MOCVD and epitaxial growth equipment. Our components are produced to the tightest tolerances required by LED and power semiconductor manufacturers. We offer both uncoated and CVD SiC coated susceptors, with custom pocket designs for various wafer sizes and reactor configurations.

FAQ

Q: What is the benefit of CVD SiC coating on graphite susceptors?
A: CVD SiC coating provides a dense, inert surface that eliminates particle generation from the graphite substrate, prevents reaction with process gases, and significantly extends susceptor service life. It is essential for critical LED and power device manufacturing.

Q: Can you produce susceptors for specific MOCVD reactor brands?
A: Yes, we manufacture susceptors compatible with major MOCVD reactor platforms. Please provide your reactor model or existing susceptor drawings, and we will produce replacement susceptors matched to your exact requirements.

Q: What is the typical service life of a SiC coated susceptor?
A: With proper process control and maintenance, CVD SiC coated graphite susceptors typically last 2-5 years in production MOCVD systems, compared to 3-6 months for uncoated graphite. The exact lifetime depends on process chemistry, temperature, and cleaning procedures.

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