SiC-Coated Graphite Susceptor for MOCVD Epitaxy
Product Overview
Our SiC-coated graphite susceptors are precision-engineered components used in metal-organic chemical vapor deposition (MOCVD) reactors for the epitaxial growth of GaN, GaAs, and InP semiconductor layers. The susceptor serves as both the mechanical support and the uniform heating platen for wafers during high-temperature epitaxy. By coating high-purity isostatic graphite with a thick, dense layer of chemical vapor deposited silicon carbide (CVD SiC), we combine the excellent thermal properties of graphite with the chemical inertness and particle-free surface of SiC.
Uncoated graphite outgases particles and impurities that contaminate epitaxial layers, leading to defects and reduced device yield. A properly engineered CVD SiC coating eliminates graphite particle shedding, prevents reaction with process gases, and provides a flat, non-reactive surface for wafer contact. At Jincheng Graphite, we manufacture SiC-coated susceptors in pocket, face-down, and barrel configurations for leading MOCVD platforms, with coating thicknesses from 50 to 150 µm and surface roughness below Ra 0.4 µm.
Key Features
- CVD SiC coating - dense, pinhole-free silicon carbide layer 50-150 µm thick
- Ultra-flat surface - Ra < 0.4 µm for uniform wafer contact and minimal slip
- High purity graphite substrate - ash content < 50 ppm to minimize contamination
- Excellent thermal uniformity - designed for ±1°C temperature distribution across wafer pockets
- Low particle generation - sealed SiC surface prevents graphite particle shedding during epitaxy
- Long service life - resists erosion by NH3, H2, and group-III precursors at up to 1600°C
- Custom pocket patterns - engineered for 2-inch, 4-inch, 6-inch, or 8-inch wafer configurations
- Refurbishment service - worn susceptors can be re-machined and re-coated for extended life
Technical Specifications
| Parameter | Value |
|---|---|
| Substrate Material | High-purity isostatic graphite |
| Substrate Bulk Density | 1.80 - 1.88 g/cm³ |
| Substrate Ash Content | < 50 ppm |
| Coating Material | CVD β-SiC |
| Coating Thickness | 50 - 150 µm (customizable) |
| Coating Purity | 99.999% SiC |
| Surface Roughness (Ra) | < 0.4 µm |
| Flatness | < 10 µm per 100 mm |
| Max Operating Temperature | 1600°C (in H2 / NH3 ambient) |
| Wafer Sizes Supported | 2", 4", 6", 8" |
| Dimensional Tolerance | ±0.02 mm |
| Porosity (coated surface) | < 0.1% |
Applications
- GaN-on-sapphire MOCVD - LED and micro-LED epitaxial growth susceptors
- GaN-on-Si power device MOCVD - high-electron-mobility transistor (HEMT) production
- GaAs and InP epitaxy - RF device and laser diode manufacturing
- SiC epitaxy - power semiconductor and RF device buffer layer growth
- Compound semiconductor R&D - university and research reactor wafer holders
- LED chip manufacturing - high-brightness LED production susceptors
Why Choose Jincheng Graphite?
- Semiconductor-grade material expertise - deep understanding of contamination control in epitaxy
- In-house CVD SiC coating - controlled coating process ensures thickness uniformity and adhesion
- Metrology on every part - flatness, roughness, and coating thickness certified before shipment
- Compatible with major reactor platforms - Aixtron, Veeco, LPE, and custom reactor designs
- Reverse engineering service - we replicate and improve upon existing susceptor designs
- Global logistics - vacuum-sealed packaging and international shipping to fabs worldwide
- Competitive pricing - factory-direct pricing significantly below Western susceptor suppliers
- Engineering support - material and coating selection guidance from our technical team
FAQ
Q: How long does a SiC-coated graphite susceptor last in production?
A: Under standard GaN MOCVD conditions, a well-maintained susceptor typically lasts 3-6 months or 3000-5000 production runs before coating degradation requires refurbishment. Actual lifetime depends on process chemistry, temperature ramp rates, and cleaning procedures.
Q: Can you refurbish and re-coat our existing susceptors?
A: Yes. We offer a complete refurbishment service: we strip the old coating, re-machine the graphite substrate to correct dimensions, and apply a fresh CVD SiC layer. This typically costs 40-60% less than purchasing new susceptors.
Q: What is the difference between CVD SiC coating and SiC powder spray coating?
A: CVD SiC is a dense, stoichiometric, monolithic coating deposited at high temperature and low pressure, achieving near-zero porosity and excellent adhesion. Plasma-spray or sintered SiC coatings are porous and prone to particle shedding, making them unsuitable for advanced semiconductor epitaxy.
Q: Do you offer TaC coating as an alternative?
A: Yes. For SiC bulk crystal growth and highly aggressive Al-containing processes, we offer tantalum carbide (TaC) CVD coatings, which provide superior resistance to aluminum etching compared to SiC.
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